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DS Featured Publication
Aspect ratio trapping for InGaAs epi on Si using nanoscale trenches yields 3 orders reduction in dislocations.
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SRC and Cornell Introduce Lithographic Breakthrough with Laser Spike Anneal to Create Higher Fidelity Circuit Patterns
Millisecond Transient Laser Anneal Outperforms State-of-Art Hotplate Bake for Both 193-Nanometer and EUV Lithography Applications
Press Release
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Four ERI students win awards at 38th IEEE Photovoltaic Specialists Conference
Four ERI students have won awards at the 38th IEEE Photovoltaic Specialists Conference (IEEE PVSC) in Austin, Texas which was held June 3rd-8th.
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Presentations from TECHCON 2012 are now available
Proceedings from the event as well as presentations and award winners are now available on the TECHCON 2012 event page.
SRC In The News
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SRC Recognizes Nineteen Superb Mentors
Nineteen industry representatives were recognized at TECHCON 2012 as the 2012 Mahboob Khan Outstanding Industry Liaison Award Winners
SRC In The News
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SRC Honors Professors from UC Berkeley and MIT for Advancing Chip Technology
Professors Receive Awards for World-Class Research in Areas Vital to Semiconductor Industry at Annual SRC TECHCON Conference
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TECHCON 2012 is underway in Austin
Highlighting smart students, break-through research, and a dynamic industry.
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ICSS Featured Publication
Architecture for runtime adaptable accuracy computing shows 37% power savings over conventional CLA adders.
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ICSS Featured Publication
Novel near-threshold I/O architecture for 8 Gbps operation achieves less than 0.7 pJ/bit
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CADTS Featured Publication
New method reduces aging effect on path delay by up to 50% with negligible area and power overhead.
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DS Featured Publication
InGaAs surface prepared by extended TMA predosing prior to ALD of Al(2)O(3) exhibit low Dit of 1E12 /cm2-eV.
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SRC Celebrates 30 Years of Leading University Technology Research at Annual TECHCON Conference
TECHCON Conference Sept. 10-11 Showcases Best of University-Driven Semiconductor Industry Research and Students
Press Release
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Prof. Akinwande of SWAN Receives IEEE Prize
Professor Deji Akinwande of the University of Texas, Austin has been awarded the inaugural Geim and Novoselov Graphene Prize by the IEEE nanotechnology council at the IEEE NANO conference this past August. The award is for his paper on multi-finger embedded gate flexible graphene transistors that feature state-of-the-art electrical and mechanical performance on soft substrates. Graphene transistors on soft substrates could enable future flexible smart systems. The award was presented at the gala dinner event at the IEEE NANO conference in Birmingham, UK. Prof. Akinwande is a an investigator in the NRI’s SWAN center at the University of Texas, Austin.
SRC In The News
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Prof. Akinwande of SWAN Receives IEEE Prize
Inaugural Geim and Novoselov Graphene Prize by the IEEE Nanotechnology Council
SRC In The News
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