The GaN-on-AlN Platform for Integrated Wide-bandgap Power Electronics |
Samuel Bader / Cornell |
First Demonstration of Vacuum-sealed Fully Integrated BEOL-compatible Field Emission Devices for Si Integrated High Voltage Applications |
Nishita Deka / UCB |
Excitonic Devices and Transport Properties |
Chelsey Dorow / UCSD |
First Transistor Demonstration of Thermal Atomic Layer Etching: InGaAs FinFETs with sub-5 nm Fin-width Featuring in situ ALE-ALD |
Wenjie Lu / MIT |
Doping Techniques for 2D Materials |
Connor McClellan / Stanford |
Device-to-System Evaluation Framework for Cognitive Microsystems |
Xiaochen Peng / Arizona State |
Post-Silicon Layout Sensitivity Mining: A Pathway to Defect-Driven Test Quality and Yield Improvement |
Gaurav Rajavendra Reddy / UT Dallas |
A Sub-60 mV/dec 2D Strain Field Effect Transistor: 2D-SFET |
Daniel Schulman / Penn State |
GaN-based Mach-Zehnder Modulators for Highly Efficient Optical Modulation and Switching Applications |
Patrick Su / UIUC |
Ferroelectric Hafnium Oxide: A Contender for Next-Generation Memory Technologies |
Ava Tan / UCB |
An Ultra-fast Multi-level MoTe2-based RRAM |
Feng Zhang / Purdue |
Hyper-Selective Co Metal ALD on Cu and Pt Without Passivation |
Steven Wolf / UC San Diego |
Multiscale Modeling of the Growth of 2D Functional Materials |
Yifan Nie / UT Dallas |
Sub-10 nm Diameter InGaAs Vertical Nanowire MOSFETs: Ni vs. Mo contacts |
Xin Zhao / MIT |
All-Cu Compliant Interconnections for Chip-to-substrate Applications |
Kashyap Mohan / Georgia Tech |
Novel (nano)materials For Thermal Management of 3D Integrated Circuits |
Cagil Koroglu / Stanford |
Experimental Demonstration of Ferroelectric Spiking Neurons for Unsupervised Clustering |
Zheng Wang / Georgia Tech |
Fine-Pitch Integration Technology for Cognitive System Scaling |
Zhe Wan / UCLA |
Performance Enhancement of Metal-Ion-Threshold Switch (MITS) Selectors |
Benjamin Grisafe / Univ. of Notre Dame |
Hyper-Dimensional (HD) Computing with Resistive RAM |
Haitong Li / Stanford |
Research Towards a Multi-level Charge-trap eNVM Fully Compatible with Digital Fabrication Processes |
Siming Ma / Harvard Univ. |
Zero-Threshold Metallic Rectifier Using Low-Energy Barrier Nano-Magnets |
Shehrin Sayed / Purdue |