| The GaN-on-AlN Platform for Integrated Wide-bandgap Power Electronics | Samuel Bader / Cornell | 
| First Demonstration of Vacuum-sealed Fully Integrated BEOL-compatible Field Emission Devices for Si Integrated High Voltage Applications | Nishita Deka / UCB | 
| Excitonic Devices and Transport Properties | Chelsey Dorow / UCSD | 
| First Transistor Demonstration of Thermal Atomic Layer Etching: InGaAs FinFETs with sub-5 nm Fin-width Featuring in situ ALE-ALD | Wenjie Lu / MIT | 
| Doping Techniques for 2D Materials | Connor McClellan / Stanford | 
| Device-to-System Evaluation Framework for Cognitive Microsystems | Xiaochen Peng / Arizona State | 
| Post-Silicon Layout Sensitivity Mining: A Pathway to Defect-Driven Test Quality and Yield Improvement | Gaurav Rajavendra Reddy / UT Dallas | 
| A Sub-60 mV/dec 2D Strain Field Effect Transistor: 2D-SFET | Daniel Schulman / Penn State | 
| GaN-based Mach-Zehnder Modulators for Highly Efficient Optical Modulation and Switching Applications | Patrick Su / UIUC | 
| Ferroelectric Hafnium Oxide: A Contender for Next-Generation Memory Technologies | Ava Tan / UCB | 
| An Ultra-fast Multi-level MoTe2-based RRAM | Feng Zhang / Purdue | 
| Hyper-Selective Co Metal ALD on Cu and Pt Without Passivation | Steven Wolf / UC San Diego | 
| Multiscale Modeling of the Growth of 2D Functional Materials | Yifan Nie / UT Dallas | 
| Sub-10 nm Diameter InGaAs Vertical Nanowire MOSFETs: Ni vs. Mo contacts | Xin Zhao / MIT | 
| All-Cu Compliant Interconnections for Chip-to-substrate Applications | Kashyap Mohan / Georgia Tech | 
| Novel (nano)materials For Thermal Management of 3D Integrated Circuits | Cagil Koroglu / Stanford | 
| Experimental Demonstration of Ferroelectric Spiking Neurons for Unsupervised Clustering | Zheng Wang / Georgia Tech | 
| Fine-Pitch Integration Technology for Cognitive System Scaling | Zhe Wan / UCLA | 
| Performance Enhancement of Metal-Ion-Threshold Switch (MITS) Selectors | Benjamin Grisafe / Univ. of Notre Dame | 
| Hyper-Dimensional (HD) Computing with Resistive RAM | Haitong Li / Stanford | 
| Research Towards a Multi-level Charge-trap eNVM Fully Compatible with Digital Fabrication Processes | Siming Ma / Harvard Univ. | 
| Zero-Threshold Metallic Rectifier Using Low-Energy Barrier Nano-Magnets | Shehrin Sayed / Purdue |