The DEEP3M Center will focus on new materials that enable tuning of a semiconductor channel resistance by controlled switching of the magnetic order in the channel gate stack. We leverage these new materials to build two novel devices: (1) spin-orbit-torque field-effect transistors (SOTFETs) that are essentially non-volatile pass transistors with very low read/write energy/delay; and (2) multi-function devices that embed XOR logic within SOTFETs (XSOTFETs). We leverage these SOTFET and XSOTFET devices to build new non-volatile polymorphic memories (SF-PolyMem) that are capable of being reused as a random access memory (RAM), content addressable memory (CAM), ternary CAM (TCAM), lookup table (LUT), and programmable logic array (PLA). Finally, we propose a radically new PIM architecture and associated computing paradigm based on this exciting new technology. We exploit (1) the non-volatile nature of the memory architecture to achieve extreme energy efficiency, and (2) the polymorphic nature of the memory architecture to enable significant improvements in performance for a broad class of challenging “big-data” applications which use numerical methods, searching, graph algorithms, compression, encryption, etc.