The theme vision is to explore new design techniques for low power and robust logic and nonvolatile memories enabled by the unique characteristics of 2D transition metal dichalcogenides (TMD) based transistors, resistive elements and spintronic devices proposed in Theme II.  The goals include: (1) Exploration of different flavors of novel non-volatile memory designs based on TMD resistive RAMs and hybrid TMD/spin technology with objectives to enhance the robustness, energy efficiency and integration density and to introduce the capability of logic computation inside the memory; and (2) Cross-layer design to enable novel computation techniques with a focus on TMD augmented spin-based Boolean logic. The investigation of the proposed circuit/architecture techniques in this theme will be based on the simulations and will be carried out in close collaboration with the experiment based device exploration in Theme II. The experimental thrust will provide the detailed device characteristics and understanding necessary for simulation analysis of their applications in novel computing/storage paradigms. At the same time, the circuit analysis will guide the experimental effort to target device characteristics suited to the application needs.